patentverein.de - Patente
Patentethik
Überwachung
Beispielhaft
Trivial
Kurios
Unverständlich
Zurück Original-Dokument
Europäisches Patentamt

Circuit for determining mechanical stress levels based on current gains

Patentnummer:US10564055B2
IPC Hauptklasse:G01B000716
Anmelder:Infineon Technologies AG (0)
85579, Neubiberg, DE
Erfinder:Ausserlechner, Udo (0)
Dr., Villach, AT; Kolle, Christian, Dr., Villach, AT; Motz, Mario, Wernberg, AT
Anmeldung:31.07.18
Offenlegung:01.07.15
Patenterteilung:18.02.20

Abstract / Hauptanspruch
A stress sensor includes a semiconductor die to which a mechanical stress is applied. The semiconductor die includes at least one bipolar junction transistor; at least one current source configured to inject at least one current through the at least one bipolar junction transistor; and a processing circuit configured to measure a first current gain and a second current gain of the at least one bipolar junction transistor based on the at least one injected current, to determine a first mechanical stress level based on the first current gain, to determine a second mechanical stress level based on the second current gain, and to generate a mechanical stress level signal based on the first mechanical stress level and the second mechanical stress level, wherein the mechanical stress level signal represents the applied mechanical stress, at least a portion of which is applied to the at least one bipolar junction transistor.

US10564055B2


Kommentare zu diesem Patent schicken Sie bitte an .
Datenschutzerklärung