Circuit for determining mechanical stress levels based on current gains
|Anmelder:||Infineon Technologies AG (0)|
85579, Neubiberg, DE
|Erfinder:||Ausserlechner, Udo (0)|
Dr., Villach, AT; Kolle, Christian, Dr., Villach, AT; Motz, Mario, Wernberg, AT
Abstract / Hauptanspruch
|A stress sensor includes a semiconductor die to which a mechanical stress is applied. The semiconductor die includes at least one bipolar junction transistor; at least one current source configured to inject at least one current through the at least one bipolar junction transistor; and a processing circuit configured to measure a first current gain and a second current gain of the at least one bipolar junction transistor based on the at least one injected current, to determine a first mechanical stress level based on the first current gain, to determine a second mechanical stress level based on the second current gain, and to generate a mechanical stress level signal based on the first mechanical stress level and the second mechanical stress level, wherein the mechanical stress level signal represents the applied mechanical stress, at least a portion of which is applied to the at least one bipolar junction transistor.|
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