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METHOD FOR MEASURING THICKNESS VARIATIONS IN A LAYER OF A MULTILAYER SEMICONDUCTOR STRUCTURE | VERFAHREN ZUR DICKENVARIATIONSMESSUNG IN EINER SCHICHT EINER MEHRSCHICHTIGEN HALBLEITERSTRUKTUR | PROCÉDÉ DE MESURE DE VARIATIONS D'ÉPAISSEUR DANS UNE COUCHE D'UNE STRUCTURE SEMI-CONDUCTRICE MULTICOUCHE

Patentnummer:EP3150959B1
IPC Hauptklasse:G01B001130
Anmelder:
Erfinder:
Anmeldung:02.10.15
Offenlegung:02.10.15
Patenterteilung:26.12.18

Abstract / Hauptanspruch
The invention relates to a method for measuring thickness variations in a first layer (1) of a multilayer semiconductor structure (S), comprising:
- acquiring, with an image acquisition system, an image of at least one zone of the surface of said structure, said image being obtained by reflecting a quasi-monochromatic light flux on said zone of the surface of said structure,
- processing said acquired image so as to determine, from intensity variations of the light reflected by said zone of the surface, a map of the thickness variations of said first layer (1), said treatment comprising comparing the intensity of each pixel of the image with a predetermined calibration curve defining a relationship between the intensity of a pixel of the acquired image and a local thickness of the first layer (1), said calibration curve being determined for a given thickness of a second layer (2) of the structure different from the first layer (1),
wherein the wavelength of said quasi-monochromatic light flux is selected so as to correspond to a minimum of the sensitivity of the reflectivity with respect to said second layer (2),
said method being characterized in that it further comprises:
- measuring the thickness of the second layer (2) in said at least one zone of the surface of the structure,
- if said measured thickness is different from the thickness of the second layer (2) considered in the calibration curve, applying a correction curve to the map of the thickness variations, wherein said correction curve defines, for said measured thickness of the second layer (2), a relationship between a thickness of the first layer (1) and a correction factor to apply to the map of the thickness variations of the first layer (1), so as to determine a corrected map of thickness variations of the first layer.

EP3150959B1


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