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Method of improving lateral resolution for height sensor using differential detection technology for semiconductor inspection and metrology

Patentnummer:US10088298B2
IPC Hauptklasse:G01B001124
Anmelder:KLA-Tencor Corporation (0)
One Technology Drive, Milpitas, CA 95035, US
Erfinder:
Anmeldung:02.09.16
Offenlegung:04.09.15
Patenterteilung:02.10.18

Abstract / Hauptanspruch
A system that can be used for semiconductor height inspection and metrology includes a complementary plate that is used with a beam splitter to create desired astigmatism and to remove chromatic aberration. Simultaneous optimization of lateral resolution and sensitivity can be enabled. The complementary plate can be made of the same material and have the same thickness as the beam splitter.

US10088298B2


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